TS256M~2GUSD Description Transcend microSD card series are non-volatile, which means no external power is required to retain the information stored on it. Besides, it is also a solid-state device that without moving parts to skip or break down. Based on original NAND flash chip, Transcend microSD can offer an incredible combination of fast data transfer, great flexibility, excellent security and incredibly small size. microSD Memory Card Features · ROHS compliant product. · Operating Voltage: 2.7 ~ 3.6V · Operating Temperature: -25 ~ 85°C · Durability: 10,000 insertion/removal cycles · Fully compatible with SD card spec. v1.1 · Comply with SD Association File System Specification · Mechanical Write Protection Switch with microSD adapter · SD Host allows MultiMediaCard upward compatibility · Form Factor: 11mm x 15mm x 1mm Placement 12345678 Front Pin Definition Back SD Mode Pin No. Name 1 2 3 4 5 6 7 DAT2 CD/DAT3 CMD VDD CLK VSS DAT0 DAT1 Type I/O/PP I/O/PP PP S I S I/O/PP I/O/PP Description Data Line [Bit2] Card Detect / Data Line [Bit3] Command / Response Supply voltage Clock Supply voltage ground Data Line [Bit0] Data Line [Bit1] Name RSV CS DI VDD SPI Mode Type Reserved I I S I S O/PP Chip Select Data In Supply voltage Description SCLK VSS Clock Supply voltage ground DO RSV Data out Reserved 8 S: Power Supply; I:Input; O:Output; PP:Push-Pull Transcend Information Inc. 1 TS256M~2GUSD Architecture microSD Memory Card Transcend Information Inc. 2 TS256M~2GUSD Bus Operating Conditions · General Parameter Peak voltage on all lines All Inputs Input Leakage Current All Outputs Output Leakage Current -10 10 µA -10 10 µA microSD Memory Card Symbol Min. -0.3 Max. VDD+0.3 Unit V Remark · Power Supply Voltage Parameter Supply voltage Supply voltage specified in OCR register Supply voltage differentials (VSS1, VSS2) Power up time -0.3 0.3 250 V ms From 0v to VDD Min. Symbol VDD Min. 2.0 Max. 3.6 Unit V Remark CMD0, 15,55,ACMD41 commands Except CMD0, 15,55, ACMD41 commands Note. The current consumption of any card during the power-up procedure must not exceed 10 mA. · Bus Signal Line Load The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + *CCARD Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded: Parameter Bus signal line capacitance Single card capacitance Maximum signal line inductance Pull-up resistance inside card (pin1) Symbol CL CCARD RDAT3 Min. Max. 100 10 16 Unit pF pF nH K Remark fPP 20 MHz, 7 cards fPP 20 MHz May be used for card detection 10 90 Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host. Parameter Pull-up resistance Bus signal line capacitance Symbol RCMD, RDAT CL Min. 10 Max. 100 250 Unit K pF Remark To prevent bus floating fPP 5 MHz, 21 cards Transcend Information Inc. 3 TS256M~2GUSD · Bus Signal Levels microSD Memory Card As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage. To meet the requirements of the JEDEC specification JESD8-1A, the card input and output voltages shall be within the following specified ranges for any VDD of the allowed voltage range: Parameter Output HIGH voltage Output LOW voltage Input HIGH voltage Input LOW voltage Symbol VOH VOL VIH VIL Min. 0.75* VDD Max. 0.125* VDD Unit V V V V Remark IOH = -100 A @VDD min IOL = 100 A @VDD min 0.625* VDD VSS ­ 0.3 VDD + 0.3 0.25* VDD Transcend Information Inc. 4 TS256M~2GUSD · Bus Timing (Default) microSD Memory Card Parameter Clock frequency Data Transfer Mode Clock frequency Identification Mode (The low freq. is required for MultiMediaCard compatibility.) Clock low time Clock high time Clock rise time Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK) Output Delay time Symbol fPP fOD Min 0 0 Max. 25 400 Unit MHz KHz Remark CL 100 pF, (7 cards) CL 250 pF, (21 cards) Clock CLK (All values are referred to min (VIH) and max (VIL) tWL tWH tTLH tTHL 10 50 10 50 10 50 10 50 ns ns ns ns ns ns ns ns ns ns 14 ns CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 100 pF, (7 cards) CL 250 pF, (21 cards) CL 25 pF, (1 cards) CL 25 pF, (1 cards) CL 25 pF, (1 cards) tISU tIH tODLY 5 5 5 0 Transcend Information Inc. TS256M~2GUSD · Bus Timing (High-speed Mode) microSD Memory Card Parameter Clock frequency Data Transfer Mode Clock low time Clock high time Clock rise time Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK) Output Delay time during Data Transfer Mode Output Hold time 1 Symbol fPP tWL tWH tTLH tTHL tISU tIH tODLY tOH Min 0 7 7 Max. 50 Unit MHz ns ns Remark CCARD 10 pF, (1 card) CCARD 10 pF, (1 card) CCARD 10 pF, (1 card) CCARD 10 pF, (1 card) CCARD 10 pF, (1 card) CCARD 10 pF, (1 card) CCARD 10 pF, (1 card) CL 40 pF, (1 card) CL 40 pF, (1 card) (1 card) Clock CLK (All values are referred to min (VIH) and max (VIL) 3 3 6 2 14 2.5 40 ns ns ns ns ns ns pF Total System capacitance for each line CL 1) In order to satisfy severe timing, host shall drive only one card. Transcend Information Inc. 6 TS256M~2GUSD Reliability and Durability Temperature Operation: -25°C / 85°C (Target spec) Storage: -40°C (168h) / 85°C (500h) Junction temperature: max. 95°C microSD Memory Card Moisture and corrosion Operation: 25°C / 95% rel. humidity Storage: 40°C / 93% rel. hum./500h Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009 10000 mating cycles 10N 0.10N*m , +/- 2.5deg max 1.5m free fall UV: 254nm, 15Ws/cm² according to ISO 7816-1 No warppage; no mold skin; complete form; no cavities surface smoothness <= -0.1 mm/cm² within contour; no cracks; no pollution (fat, oil dust, etc.) Durability Bending Torque Drop test UV light exposure Visual inspection Shape and form Above technical information is based on standard data and tested to be reliable. However, Transcend makes no warranty, either expressed or implied, as to its accuracy and assumes no liability in connection with the use of this product. Transcend reserves the right to make changes in specifications at any time without prior notice. Transcend Information Inc. 7 TS256M~2GUSD Register Information microSD Memory Card Within the card interface six registers are defined: OCR, CID, CSD, RCA, DSR and SCR. These can be accessed only by corresponding commands (see Chapter 4.7). The OCR, CID, CSD and SCR registers carry the card/content specific information, while the RCA and DSR registers are configuration registers storing actual configuration parameters. 1. OCR register The 32-bit operation conditions register stores the VDD voltage profile of the card. In addition, this register includes a status information bit. This status bit is set if the card power up procedure has been finished. The OCR register shall be implemented by the cards which do not support the full operating voltage range of the SD Memory Card bus, or if the card power up extends the definition in the timing diagram. A voltage range is not supported if the corresponding bit value is set to LOW. As long as the card is busy, the corresponding bit (31) is set to LOW. Transcend Information Inc. 8 TS256M~2GUSD 2. CID Register microSD Memory Card The Card IDentification (CID) register is 128 bits wide. It contains the card identification information used during the card identification phase. Every individual flash card shall have a unique identification number. The structure of the CID register is defined in the following paragraphs: · MID An 8 bit binary number that identifies the card manufacturer. The MID number is controlled, defined and allocated to a SD Memory Card manufacturer by the SD Group. This procedure is established to ensure uniqueness of the CID register. · OID A 2 ASCII string characters that identifies the card OEM and/or the card contents (when used as a distribution media either on ROM or FLASH cards). The OID number is controlled, defined and allocated to a SD Memory Card manufacturer by the SD Group. This procedure is established to ensure uniqueness of the CID register. · PNM The product name is a string, 5 ASCII characters long. · PRV The product revision is composed of two Binary Coded Decimal (BCD) digits, four bits each, representing an "n.m" revision number. The "n" is the most significant nibble and "m" is the least significant nibble. As an example, the PRV binary value field for product revision "6.2" will be: 0110 0010 · PSN The Serial Number is 32 bits of binary number. · MDT Transcend Information Inc. 9 TS256M~2GUSD microSD Memory Card The manufacturing date composed of two hexadecimal digits, one is 8 bit representing the year(y) and the other is four bits representing the month(m). The "m" field [11:8] is the month code. 1 = January. The "y" field [19:12] is the year code. 0 = 2000. As an example, the binary value of the Date field for production date "April 2001" will be: 00000001 0100. · CRC CRC7 checksum (7 bits). 3. CSD Register The Card-Specific Data register provides information on how to access the card contents. The CSD defines the data format, error correction type, maximum data access time, whether the DSR register can be used etc. The programmable part of the register (entries marked by W or E, see below) can be changed by CMD27. The type of the entries in the table below is coded as follows: R= readable, W(1) = writable once, W = multiple writable. Transcend Information Inc. 10 TS256M~2GUSD microSD Memory Card The following sections describe the CSD fields and the relevant data types. If not explicitly defined otherwise, all bit strings are interpreted as binary coded numbers starting with the left bit first. · CSD_STRUCTURE Version number of the related CSD structure. · TAAC Defines the asynchronous part of the data access time. Transcend Information Inc. 11 TS256M~2GUSD microSD Memory Card · NSAC Defines the worst case for the clock dependent factor of the data access time. The unit for NSAC is100 clock cycles. Therefore, the maximal value for the clock dependent part of the data access time is 25.5k clock cycles. The total access time NAC as expressed in the Table 34 is the sum of TAAC and NSAC. It has to be computed by the host for the actual clock rate. The read access time should be interpreted as a typical delay for the first data bit of a data block or stream. · TRAN_SPEED The following table defines the maximum data transfer rate per one data line - TRAN_SPEED: Note that for current SD Memory Cards that field must be always 0_0110_010b (032h) which is equal to 25MHz - the mandatory maximum operating frequency of SD Memory Card. In High-Speed mode, that field must be always 0_1011_010b (05Ah) which is equal to 50MHz. And when the timing mode returns to the default by CMD6 or CMD0 command, its value will be 032h. · CCC The SD Memory Card command set is divided into subsets (command classes). The card command class register CCC defines which command classes are supported by this card. A value of `1' in a CCC bit means that the corresponding Transcend Information Inc. 12 TS256M~2GUSD command class is supported. microSD Memory Card · READ_BL_LEN The maximum read data block length is computed as 2READ_BL_LEN. The maximum block length might therefore be in the range 512...2048 bytes (see Chapter 4.11 for details). Note that in SD Memory Card the WRITE_BL_LEN is always equal to READ_BL_LEN · READ_BL_PARTIAL (always = 1 in SD Memory Card) Partial Block Read is always allowed in SD Memory Card. It means that smaller blocks can be used as well. The minimum block size will be one byte. · WRITE_BLK_MISALIGN Defines if the data block to be written by one command can be spread over more than one physical block of the memory device. The size of the memory block is defined in WRITE_BL_LEN. WRITE_BLK_MISALIGN=0 signals that crossing physical block boundaries is invalid. WRITE_BLK_MISALIGN=1 signals that crossing physical block boundaries is allowed. · READ_BLK_MISALIGN Defines if the data block to be read by one command can be spread over more than one physical block of the memory device. The size of the memory block is defined in READ_BL_LEN. READ_BLK_MISALIGN=0 signals that crossing physical block boundaries is invalid. READ_BLK_MISALIGN=1 signals that crossing physical block boundaries is allowed. · DSR_IMP T ...